Dresden 2026 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 54: Graphene: Electronic structure, excitations, etc. (joint session O/TT)
TT 54.6: Talk
Wednesday, March 11, 2026, 16:15–16:30, HSZ/0204
Domain-resolved electronic structure of AgTe-intercalated graphene on SiC(0001): From semiconducting Te-rich interlayer bands to metallic AgTe alloy states — •Vibha Reddy1, Sawani Datta1, Bharti Matta1, Philipp Rosenzweig2, Ulrich Starke1, and Kathrin Küster1 — 1Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, — 2Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart
Intercalation at the graphene/SiC(0001) interface provides a powerful route towards engineering the electronic properties of both the graphene and the intercalant. Here, we present the first realization of a transition-metal chalcogen alloy intercalated into the graphene/SiC(0001) interface via AgTe intercalation. The nominally AgTe-intercalated system segregates into multiple microscale intercalation phases, namely, Te-rich, Ag-rich and AgTe alloyed domains. Spatially-resolved and angle-resolved photemission spectroscopy (ARPES) reveals that each domain exhibits distinct graphene doping levels and interlayer band dispersions, highlighting the strong interplay between local intercalation chemistry investigated by X-ray photoelectron spectroscopy (XPS) and electronic band structure. Given the intrinsic spin-orbit coupling and topologically non-trivial states associated with Te- and Ag-based 2D materials, the AgTe alloy-intercalated graphene represents a promising platform for realizing domain-specific emergent quantum phenomena, underscoring the chemical versatility and tunability of alloy-based heterostructures in interface engineering.
Keywords: Alloy intercalation; Epitaxial graphene on SiC; ARPES; AgTe