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TT: Fachverband Tiefe Temperaturen

TT 74: Topological Insulators

TT 74.4: Talk

Thursday, March 12, 2026, 10:15–10:30, CHE/0091

Dual-gated hBN/BiSbTeSe/hBN heterostructures: fabrication and low-temperature magnetotransport — •Kirill Teslenko, Holger Mirkes, Alexandre Bernard, and Christoph Kastl — Walter Schottky Institute, School of Natural Sciences, Technical University of Munich

Topological insulators with tunable surface states provide a platform for exploring quantum transport phenomena. We present the fabrication and characterization of dual-gated hBN/BiSbTeSe/hBN (BSTS) heterostructures designed to allow controlled access to the topological surface states. The devices are fabricated via optimized optical lithography, and the heterostacks are assembled using a dry-transfer stacker operated both under nitrogen atmosphere and under ambient conditions. Two approaches are used: transferring BSTS onto pre-patterned metal contacts, and assembling the full heterostack before metal evaporation. Photocurrent measurements on non-encapsulated BSTS, BTS, and SbTe flakes were carried out to assess their optoelectronic response. Furthermore, low-temperature magnetotransport measurements on the encapsulated devices are carried out to resolve characteristic signatures of topological surface states.

Keywords: topological insulators; hBN-encapsulated heterostructures; weak anti-localization; magnetotransport

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