Dresden 2026 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
TT: Fachverband Tiefe Temperaturen
TT 74: Topological Insulators
TT 74.4: Talk
Thursday, March 12, 2026, 10:15–10:30, CHE/0091
Dual-gated hBN/BiSbTeSe/hBN heterostructures: fabrication and low-temperature magnetotransport — •Kirill Teslenko, Holger Mirkes, Alexandre Bernard, and Christoph Kastl — Walter Schottky Institute, School of Natural Sciences, Technical University of Munich
Topological insulators with tunable surface states provide a platform for exploring quantum transport phenomena. We present the fabrication and characterization of dual-gated hBN/BiSbTeSe/hBN (BSTS) heterostructures designed to allow controlled access to the topological surface states. The devices are fabricated via optimized optical lithography, and the heterostacks are assembled using a dry-transfer stacker operated both under nitrogen atmosphere and under ambient conditions. Two approaches are used: transferring BSTS onto pre-patterned metal contacts, and assembling the full heterostack before metal evaporation. Photocurrent measurements on non-encapsulated BSTS, BTS, and SbTe flakes were carried out to assess their optoelectronic response. Furthermore, low-temperature magnetotransport measurements on the encapsulated devices are carried out to resolve characteristic signatures of topological surface states.
Keywords: topological insulators; hBN-encapsulated heterostructures; weak anti-localization; magnetotransport
