Dresden 2026 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 78: Quantum Dots and Point Contacts (joint session TT/HL)
TT 78.1: Talk
Thursday, March 12, 2026, 11:00–11:15, HSZ/0101
Mapping dissipation in a quantum dot junction — •Johannes Höfer1, Subhomoy Haldar2, Ville Maisi2, Hervé Courtois1, and Clemens B. Winkelmann1,3 — 1Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 25 rue des Martyrs, Grenoble, France — 2NanoLund and Solid State Physics, Lund University, 22100 Lund, Sweden — 3Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France
Characterization of quantum devices relies primarily on electrical properties. It is usually assumed that all parts of the device remain at the same temperature, but the inevitable presence of local dissipation can lead to significant deviations and degrade device performance [1].
Here, we present simultaneous measurement of the current through a quantum dot junction as well as the dissipation generated by the current. To this end, we thermally isolate the drain contact of an epitaxially defined quantum dot in an InAs nanowire. The electron temperature is measured via the zero-bias conductance of a Josephson junction [2]. Due to the energy-selective transport through a single quantum level, we can tune the dissipation solely with a gate voltage, while keeping both the current and voltage across the dot constant.
The presented device enables future investigations of local dissipation in nanoscale devices, e.g. for mitigation of detrimental heating effects, as well as implementations of proposed experiments in the field of quantum thermodynamics.
[1] S.G.J. Philips et al., Nature 609 (2022) 919
[2] B. Karimi, & J.P. Pekola, Phys. Rev. Applied 10 (2018) 054048
Keywords: Quantum Dot; Dissipation; Thermometry; Heat transport