Dresden 2026 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 9: 2D Materials: Electronic structure, excitations, etc. I (joint session O/HL/TT)
TT 9.5: Talk
Monday, March 9, 2026, 11:45–12:00, TRE/MATH
Influence of Vanadium Doping on WSe2, as seen through ARPES — •Jana Kähler1,2, Florian K. Diekmann1,2, Matthias Kalläne1,2,3, Tim Riedel1,2, Adina Timm1,2, Anja Yalim1,2, Jens Buck1,2, Meng-Jie Huang2, Jules M. Knebusch1,2, Luka Hansen1,3, Jan Benedikt1,3, and Kai Rossnagel1,2,3 — 1Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany — 2Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany — 3Kiel Nano, Surface and Interface Science KiNSIS, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany
Spintronics offers a compelling, energy-efficient alternative to traditional electronics with potential applications in communications, sensing, and information processing. The vanadium-doped layered transition metal dichalcogenide 2H-WSe2 is particularly promising as a room-temperature magnetic semiconductor with gate-tunable transport properties. Here, we use a combination of 11 eV laser, 21.2 eV He-lamp, and soft X-ray synchrotron ARPES to highlight the influence of a fairly small vanadium doping on the electronic structure of WSe2. Both the pristine and doped compounds were grown by chemical vapor transport in our own laboratory.
Keywords: Transition metal dichalgonide (TMDC); Chemical vapor transport (CVT); Electronic structure; Magnetic semiconductor