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HK: Fachverband Physik der Hadronen und Kerne
HK 36: Instrumentation VII
HK 36.2: Talk
Thursday, March 19, 2026, 14:15–14:30, PHIL B 302
Aluminum strip-lines on pCVD diamond carriers* — •Eva-dhidho Taka1, Franz A. Matejcek1, Christian Müntz1, and Joachim Stroth1,2,3 — 1Goethe-Universität Frankfurt — 2GSI Darmstadt — 3Helmholtz Forschungsakademie Hessen für FAIR
The present work focuses on the aluminum metallization of pCVD (polycrystalline Chemical Vapor Deposition) diamond substrates and patterning of strip-lines. This is a generic research project with the goal of producing lightweight, vacuum compatible modules to minimize multiple scattering, highly appealing for micro-vertexing applications. Conductive traces, to perform the readout and control of silicon sensors, are introduced directly on the carrier thus obtaining pCVD diamond carriers with expanded functionalities: adding electrical connectivity along with mechanical stability and efficient heat management.
This application requires trace thicknesses up to the order of micrometers. Since combining trace sharpness, thickness homogeneity, and a process with dependable reproducibility poses a challenge, a method consisting of consecutive deposition steps is proposed. A thin Aluminum seed layer is initially sputtered into a prepped pCVD diamond surface. The layer is then precisely patterned utilizing mask-less photolithography, and the so produced lines are subsequently thickened in an electrodeposition process. This contribution introduces the method and presents first results.
*This work is affiliated with the ERuM-Pro Si-D Consortium, supported by BMFTR (05H24RF1).
Keywords: pCVD Diamond; Al strip-lines; Photolithography; Electrodeposition