Erlangen 2026 – scientific programme
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T: Fachverband Teilchenphysik
T 30: Silicon Detectors III
T 30.8: Talk
Tuesday, March 17, 2026, 18:00–18:15, KH 01.012
Investigation of bond qualities in daisy chain wafers for Wafer-to-wafer bonded hybrid pixel detectors — •Janna Vischer1, Yannick Dieter2, Fabian Hügging1, Kevin Kröninger2, Maximilian Mucha2, Matthias Schüssler2, and Jens Weingarten1 — 1Technische Universität Dortmund, Dortmund, Germany — 2Universität Bonn, Bonn, Germany
Semiconductor pixel detectors allow for precisely tracking ionizing particles in high-energy physics experiments and medical applications. Previously, during the manufacturing of hybrid pixel detectors, a common practice to combine the separately manufactured sensor and its readout chip is to bump-bond two single dies together. Wafer-to-wafer bonding is a new method in development for manufacturing hybrid pixel detectors, where whole detector wafers and chip wafers are bonded before being diced to their definite size. This promises detectors to have larger sensitive areas and a reduced thickness through thinning of the wafers after bonding.
To refine the Wafer-to-wafer bonding procedure low-cost non-detector daisy chain wafer stacks have been produced for proof of principle. This talk discusses recent results of measurements on one of those bonded wafer stacks. The resistivity of single bonds as well as bonds connected in daisy chains have been measured on wafer level to investigate spatial dependent deviances in preparation for the first Wafer-to-wafer bonded detectors.
Keywords: Silicon detector; Wafer; Detector development; Hybridization; Bonding