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T: Fachverband Teilchenphysik

T 52: Silicon Detectors V

T 52.6: Talk

Wednesday, March 18, 2026, 17:30–17:45, KH 01.012

Characterisation of an Enhanced Lateral Drift (ELAD) Sensor Prototype — •Judith Schlaadt, Naomi Davis, Doris Eckstein, Moritz Guthoff, Simon Spannagel, Anastasiia Velyka, and Gianpiero Vignola — DESY, Hamburg, Germany

The development of vertex and tracking detectors for future lepton colliders faces various challenges regarding time and position resolution while maintaining a low material budget and the capability to process high particle rates. In this context, one approach to improve the spatial resolution is to utilise the effect of charge sharing Here, the ratio of the signal amplitudes measured by neighbouring readout electrodes gives information about the hit position of the traversing particle. By applying a magnetic field and exploiting the Lorentz drift of the generated charge carriers in the sensor volume, charge sharing can be observed. Also, tilting the sensor results in the same effect. However, neither approach is suitable for vertex detectors, since the effect is not sufficient in the case of thin sensors.

The enhanced lateral drift (ELAD) sensor prototype addresses these requirements by featuring a multiple-layer design including buried doping implants. The deep implants generate an additional lateral electric field inside the sensor bulk, resulting in increased charge sharing. Through simulations, the sensor design was optimised to allow for position-dependent charge sharing close to the theoretical optimum, which results in an improved impact position interpolation. This talk presents first results of the characterisation of an ELAD sensor prototype.

Keywords: silicon sensors; characterisation; charge sharing; electric field