Erlangen 2026 – scientific programme
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T: Fachverband Teilchenphysik
T 76: Silicon Detectors VII
T 76.7: Talk
Thursday, March 19, 2026, 17:45–18:00, KH 01.022
Electrical Simulation and Characterization of All-Silicon Modules for CMOS Monolithic Pixel Detectors — Markus Cristinziani1, Qader Dorosti1, Stefan Heidbrink2, Denise Müller1, Noah Siegemund1, •Darshil Vagadiya1, Wolfgang Walkowiak1, Jens Winter2, and Michael Ziolkowski2 — 1Experimentelle Teilchenphysik, Center for Particle Physics Siegen, Universität Siegen — 2Elektronikentwicklungslabor Physik, Universität Siegen
Silicon pixel detectors offer high spatial and temporal resolution with a low material budget. Traditional multi-chip modules add material through bump-bonding, flexible PCBs, cooling, and support structures. A new approach explores post-processing monolithic wafers with redistribution layers interconnecting multiple chips, enabling thin and lightweight structures based on low-power monolithic CMOS sensors. In current production, this concept is used in all-silicon modules that integrate four sensors cut from a single wafer and rely on the OBELIX monolithic active pixel sensor, which reduces component count and support low-material designs suitable for future collider environments. The research in Siegen focuses on the electrical performance of signal and data interconnections at high transmission speeds. Current structures reach 0.25 Gbps, with a target of at least 1 Gbps. Prototype measurements covering impedance, signal integrity, S-parameters, and electrical simulations of differential trace geometry, dielectric layers, and vias are used to identify speed limitations and guide optimization of the interconnection layout for higher data-rate operation.
Keywords: Pixel Modules; Electrical Simulations; Future Colliders