Erlangen 2026 – scientific programme

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T: Fachverband Teilchenphysik

T 76: Silicon Detectors VII

T 76.8: Talk

Thursday, March 19, 2026, 18:00–18:15, KH 01.022

Thermomechanical Simulation of an All-Silicon CMOS Pixel Detector Ladder — •Nana Chychkalo, Joern Groesse-Knetter, and Arnulf Quadt — Georg-August-Universitaet Goettingen, Goettingen, Germany

This work investigates a new monolithic ladder concept for the All-Silicon CMOS pixel detectors, in which several chips are integrated into a single self-supporting silicon structure. This approach aims to reduce the material budget compared to conventional hybrid assemblies and offers a promising option for future high-luminosity experiments.

A key feature of this concept is the use of a Redistribution Layer (RDL) for both power delivery and data transmission across the ladder, eliminating the need for additional support circuitry. The combination of active CMOS areas and RDL components in a thin monolithic structure, requires, however, careful evaluation of the resulting thermal and mechanical behavior.

This contribution presents thermomechanical simulations performed to understand the ladder heat dissipation under realistic operating conditions. These studies are used to estimate cooling requirements and to define suitable air-cooling parameters for stable operation.

Keywords: pixel detector; All-Silicon; detector development; air-cooling thermal simulation; monolithic pixel modules