Erlangen 2026 – scientific programme

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T: Fachverband Teilchenphysik

T 97: Silicon Detectors VIII

T 97.4: Talk

Friday, March 20, 2026, 09:45–10:00, KH 01.022

Radiation damage of red sensitive SiPMs — •Momo Scharf, Massimiliano Antonello, Lukas Brinkmann, Erika Garutti, Katjana Neumann, and Joern Schwandt — Universität Hamburg

A new generation of red sensitive Silicon Photomultipliers (SiPMs) are being developed by Broadcom. These feature a high Photo Detection Effiency (PDE) for near infrared light with a peak PDE of 38 % at 700 nm and a wide dynamic range due to the small pixel pitch with 6216 SPADs per mm². The influence of radiation damage on the performance of this new SiPM design is investigated. Sets of samples have been neutron irradiated in the TRIGA reactor facility at JSI (Ljubljana) at four different fluences up to 1×10¹³ cm⁻². The characterization of the SiPMs includes performance parameters such as breakdown voltage, gain, correlated noise, dark count rate and non-linear response. The correction function is obtained with the single-step method on non-irradiated samples and the applicability to irradiated samples tested. This presentation shows first results of the comparison for irradiated and non-irradiated samples.

Keywords: Silicon Photomultiplier; Non-linear Response; Radiation Damage