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T: Fachverband Teilchenphysik

T 97: Silicon Detectors VIII

T 97.5: Talk

Friday, March 20, 2026, 10:00–10:15, KH 01.022

On the temperature, voltage, gate-length, and pixel-pitch dependence of the SiPM non-linear response — •Lukas Brinkmann, Massimiliano Antonello, Erika Garutti, Katjana Neumann, Momo Scharf, and Jörn Schwandt — Universität Hamburg, Hamburg, Germany

The finite number of pixels in a silicon photomultiplier (SiPM) limits its dynamic range to light pulses up to typically 80 % of the total number of pixels in a device. Correcting the non-linear response is essential to extend the SiPM’s dynamic range. One challenge in determining the non-linear response correction is providing a reference linear light source. Instead, the single-step method used to calibrate PMTs is applied, based on the difference in responses to two light sources.

A systematic study of the SiPM’s response dependence on the operating voltage, temperature and gate length is performed for a KETEK SiPM design with different pixel sizes. The correction function, determined at reference conditions (T=20 ^∘C, Δ V = 5 V), is applied to data spanning a temperature range of −20 ^∘C to +20 ^∘C and an overvoltage range of 3 V to 5 V.

The method successfully corrects the non-linearity of the SiPM response across this parameter space for sub-nanosecond illumination with light intensities up to a mean number of Geiger discharges equal to the number of pixels, with an average deviation from linearity below 3 %. No significant dependence of the correction function on temperature, overvoltage, gate length or pixel size is observed for the tested devices.

Keywords: Silicon Photomultiplier; Non Linear Response