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Q: Fachverband Quantenoptik und Photonik
Q 66: Poster – Quantum Technologies III
Q 66.11: Poster
Thursday, March 5, 2026, 17:00–19:00, Philo 2. OG
Scalable formation of tin-vacancy centers in diamond for quantum technology applications. — •Aikaterini Tzanetou1, Felix Hoffmann1, Ella Schneider2, Gianfranco Aresta3, Mukesh Triparthi4, Julian Rickert4, and Daniel Hähnel1 — 1Fraunhofer Institute for applied Solid State Research IAF, Freiburg, 79108, Germany — 2Surrey Ion Beam Centre, University of Surrey, Guildford GU2 7XH, UK — 3Ionoptika Ltd.B6 Millbrook Close, Chandler's Ford, Hampshire SO53 4BZ, UK — 4XeedQ GmbH, Augustusplatz 1-4, 04109 Leipzig, Germany
The tin-vacancy (Sn-V) center in diamond has emerged as a promising emitter for the realization of quantum information processing protocols. We here report on a process flow that targets the precise, reproducible and localized formation of tin-vacancy centers in diamond intended for use in quantum technology applications. On this basis, tin ions (117-Sn2+) are implanted on high-purity diamond substrates by means of focused-ion-beam single-ion implantation. The implantation pattern consists of 100-spot arrays each formed by discrete number of ions per spot. Thermal annealing in vacuum is applied for the color center generation and consequently the defects are studied with optical characterization tools. Localization at the nanoscale with spot sizes below 90 nm is reported from stimulated emission depletion (STED) microscopy measurements. Spectral analysis and photoluminescence intensity measurements provide insights on Sn-V formation as a function of ion fluence. The process flow is evaluated in a statistical framework with a focus on scalability and process yield.
Keywords: color centers in diamond; FIB implantation; tin-vacancy; STED; scalability