Mainz 2026 – scientific programme

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Q: Fachverband Quantenoptik und Photonik

Q 66: Poster – Quantum Technologies III

Q 66.23: Poster

Thursday, March 5, 2026, 17:00–19:00, Philo 2. OG

Quantification of Spectral Diffusion Rate for Tin-Vacancy Quantum Emitters in Low-Temperature Annealed Diamond — •Linus Ehre, Dennis Herrmann, and Christoph Becher — Fachrichtung Physik, Universität des Saarlandes, Campus E2.6, D-66123, Germany

The Tin-Vacancy color center (SnV) in diamond is a promising candidate as a solid-state quantum network node, emitting highly indistinguishable lifetime-limited photons.
While the SnV’s inversion symmetry in an ideal diamond lattice prevents first-order Stark shifts, a high defect-density causes distortions of this ideal structure. Consequently, the SnV becomes more susceptible to spectral diffusion (SD) in fluctuating charge environments, broadening the optical transition. High-pressure high-temperature (HPHT) annealing at T=2100 ^∘C minimizes this effect, but causes damage by graphitizing the surface. In contrast, annealing at lower temperatures (LT), i.e. T=1200 ^∘C for up to 80 hours is a more accessible method and mostly leaves the diamond surface intact. However, this LT-treatment appears to be less effective in suppressing spectral diffusion, due to remaining symmetry distortions and charge traps.
In this work, we present a method to determine the SD rate for single SnV centers in an LT-annealed diamond sample. Variation of experimental conditions allows for a comparison to HPHT-treated diamonds and thus an evaluation of possible tradeoffs. Our results offer key insights into the LT-treated SnV’s suitability as a stable high-quality photon source for future quantum network applications.

Keywords: Quantum Communication; Quantum Networks; Color Centers in Diamond; Spectral Diffusion; Low-Temperature Annealing