Parts | Days | Selection | Search | Updates | Downloads | Help
Q: Fachverband Quantenoptik und Photonik
Q 72: Quantum Technologies – Color Centers II
Q 72.2: Talk
Friday, March 6, 2026, 11:15–11:30, P 5
Electrical control for spin defects integrated in silicon carbide nanophotonic devices — •Adil Han Dogan1, Timo Steidl1, Pierre Kuna1, Rainer Stöhr1, Wolfang Knolle2, Misagh Ghezellou3, Jawad Ul-Hassan3, Vadim Vorobyov1, and Jörg Wrachtrup1,4 — 13rd Institute of Physics, IQST, and Research Center SCoPE, University of Stuttgart, Stuttgart, Germany — 2Department of Sensoric Surfaces and Functional Interfaces, Leibniz-Institute of Surface Engineering (IOM), Leipzig, Germany — 3Department of Physics, Chemistry and Biology, Linköping University, Linköping, Sweden — 4Max Planck Institute for Solid State Research, Stuttgart, Germany
Spin defects in silicon carbide are promising candidates for chip-scale quantum information processing. They combine atom-like optical transitions and long-lived electron and nuclear spin qubit clusters in a nanofabrication-friendly host material. Their integration in nanophotonic structures provides enhanced spin-photon interaction and increases photon collection efficiency. However, reproducible control knobs remain rare, and proximity to material interfaces in nanostructures impairs the emitter properties of the color centers. For this purpose, we develop electrical control of spin defects to mitigate near-surface spectral diffusion and offer tunability via Stark shift and Pockel's effect. Thus, we project a possible path towards on-chip quantum photonic information processing through key advances in nanofabrication and electrical control in silicon carbide.
Keywords: color centers; photonics; nanofabrication; electrical control; scalability