Mainz 2026 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 72: Quantum Technologies – Color Centers II
Q 72.7: Talk
Friday, March 6, 2026, 12:30–12:45, P 5
Raman signatures and spin relaxation mechanism of VB- in hBN quantum emitters — •Chanaprom Cholsuk1, Viktor Ivády2, Asli Çakan1, Volker Deckert3, Sujin Suwanna4, and Tobias Vogl1 — 1Department of Computer Engineering, TUM School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany — 2Department of Physics of Complex Systems, Eötvös Loránd University, Egyetem tér 1-3, H-1053 Budapest, Hungary — 3Institute of Physical Chemistry, Friedrich-Schiller University, 07743 Jena, Germany — 4Department of Physics, Mahidol University, Bangkok 10400, Thailand
Point defects in hexagonal boron nitride (hBN) are crucial for single-photon emission and can host controlled nuclear spins, making them applicable for quantum technologies. However, identifying the defects remains a challenge. Here, we propose Raman spectroscopy as a strategy for defect identification. Using density functional theory, we first benchmark the Raman signatures of the negatively-charged boron vacancy (VB-), and extend to 100 additional defects. We find that the local atomic environment is the primary determinant of the Raman lineshape, enabling discrimination among defects, as well as spin and charge states. Building on the VB- benchmark, we develop a low-temperature spin-dynamics model for T1 relaxation and demonstrate that the VB- forms a strongly coupled electron-nuclear spin core. Overall, our work establishes Raman spectroscopy as a route to defect identification, available at https://h-bn.info, and the model to capture spin interactions.
Keywords: hBN defects; Negatively charged boron vacancy; Raman spectrum; Spin relaxation; Quantum emitter