Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 13: Poster Session III: Layer properties: electrical, optical and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM; XPS, SIMS, RBS..)
DS 13.19: Poster
Montag, 11. März 2013, 17:00–20:00, Poster B1
Formation of ZnO layers by spraying Zn(acac)2 and [Zn(O2C(CH2OCH2)3H)2] precursors from solution — •Iulia G. Toader1, Falko Seidel1, Philipp Schäfer1, Ovidiu D. Gordan1, Alexander Jakob2, Stefan Möckel2, Heinrich Lang2, Michael Hietschold3, and Dietrich R. T. Zahn1 — 1Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany — 2Inorganic Chemistry, Chemnitz University of Technology, D-09111 Chemnitz, Germany — 3Solid Surfaces Analysis Group, Chemnitz University of Technology, D-09107 Chemnitz, Germany
Due to its transparency and wide band gap ZnO represents a suitable material for future transparent electronics. In this work, two ZnO precursors namely zinc acetylacetonate hydrate (Zn(acac)2) and zinc(II)-[2-(2-methoxyethoxy)ethoxy]acetate ([Zn(O2C(CH2OCH2)3H)2]) were sprayed from solution. A post annealing treatment was applied on the as-sprayed films which led to the formation of ZnO layers. Their investigation was performed using infrared and Raman spectroscopies, scanning electron microscopy, and energy dispersive X-ray spectroscopy. By varying parameters such as the heating temperature and the time interval during heating, the quality of the ZnO layers formed could be tested and improved. It was therefore proven that not only the temperature but most importantly the heating time play an important role in achieving high quality ZnO layers. Moreover, it was shown that for the two precursors the same heating treatment leads to completely different film morphologies.