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Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives

Donnerstag, 3. April 2014, 17:00–20:00, P1

17:00 HL 107.1 Structural properties of Cu2O1−xSx alloys from first principles — •Raphael Knecht, Marcel Giar, Markus Heinemann, and Christian Heiliger
17:00 HL 107.2 Growth of Cuprous Oxide by Plasma-Assisted Molecular Beam Epitaxy — •Max Kracht, Jörg Schörmann, Martin Eickhoff, and Philip Klement
17:00 HL 107.3 TEM investigation of structural changes in epitaxial (In,Sn)2O3 and (Sn,In)O2 films — •Stephan Scholz, Anna Mogilatenko, Holm Kirmse, Oliver Bierwagen, Mark E. White, Min-Ying Tsai, Martin Schmidbauer, James S. Speck, and Saskia F. Fischer
17:00 HL 107.4 Towards realization of bipolar devices based on In2O3: Epitaxy of Be doped InAs on In2O3 — •Fariba Hatami, Ted Masselink, Martin Schmidbauer, Patrick Vogt, and Oliver Bierwagen
17:00 HL 107.5 First principles investigation of influence of point defects on the magnetic properties of zinc ferrite — •Waheed A. Adeagbo, Sanjeev K. Nayak, Martin Hoffmann, Arthur Ernst, and Wolfram Hergert
17:00 HL 107.6 TEM and FIB-based EBIC investigations to study photovoltaic properties of a complex oxide pn-heterojunction — •Patrick Peretzki, Pablo Marín Perera, Benedikt Ifland, Daniel Mierwaldt, Philipp Saring, Christian Jooss, and Michael Seibt
17:00 HL 107.7 Ab initio investigations of Zr1−xCexO2 — •Michael Bachmann and Christian Heiliger
17:00 HL 107.8 Ab-initio investigation of intermediate tin oxides — •Bianca Eifert and Christian Heiliger
17:00 HL 107.9 Growth and characterization of cuprous oxide thin films by chemical vapor depositionJohannes Bieber, •Elisabeth A. Zolnowski, Gunther Haas, Yinmei Lu, Benedikt Kramm, Martin Becker, and Bruno K. Meyer
17:00 HL 107.10 Optical spectroscopy of doped Cu2O thin films — •Julian Benz, Philipp Hering, Torsten Henning, Uwe Kaiser, Wolfram Heimbrodt, Bruno K. Meyer, and Peter J. Klar
17:00 HL 107.11 High-quality SnO2 thin films grown by chemical vapor deposition — •Yinmei Lu, Martin Becker, Benedikt Kramm, Johannes Bieber, Jie Jiang, Angelika Polity, and Bruno Meyer
17:00 HL 107.12 Nitrogen doping in SnO2 thin films grown by chemical vapor deposition — •Jie Jiang, Yinmei Lu, Johannes Bieber, and Bruno Meyer
17:00 HL 107.13 three dimensional character of the near-EF band of cleaved In2O3(111) single crystals — •valentina scherer, christoph janowitz, zbigniew galazka, and recardo manzke
17:00 HL 107.14 Electronic and optical properties of Ga2O3 — •Jürgen Furthmüller and Friedhelm Bechstedt
17:00 HL 107.15 A spectroscopic comparison of AOS thin films and TCO single crystals — •Jörg Haeberle, Diana Gaspar, Pedro Barquinha, Stephan Machulik, Christoph Janowitz, Zbigniew Galazka, and Dieter Schmeißer
17:00 HL 107.16 3ω thermal conductivity measurements of β−Ga2O3 bulk crystal — •Martin Handwerg, Christine Bülow, Rüdiger Mitdank, and Saskia F. Fischer
17:00 HL 107.17 Structural and electrical investigations of Si-doped (InxGa1−x)2O3 thin films — •Anna Werner, Stefan Müller, Holger von Wenckstern, and Marius Grundmann
17:00 HL 107.18 Electrical characterization of Si-doped β-Ga2O3 thin films grown by pulsed laser deposition — •David Diering, Florian Schmidt, Stefan Müller, Daniel Splith, Holger von Wenckstern, and Marius Grundmann
17:00 HL 107.19 Raman scattering in (In,Ga)2O3 thin films — •Christian Kranert, Christian Dähne, Jörg Lenzner, Holger von Wenckstern, Rüdiger Schmidt-Grund, and Marius Grundmann
17:00 HL 107.20 NIR-VUV dielectric function of (In,Ga)2O3 thin film with lateral composition spread — •Hannes Krauß, Tammo Böntgen, Holger von Wenckstern, Jörg Lenzner, Rüdiger Schmidt-Grund, and Marius Grundmann
17:00 HL 107.21 Properties of MIS-diodes based on Si-doped β-Ga2O3 — •Anna Reinhardt, Holger von Wenckstern, and Marius Grundmann
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