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Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives

HL 107.17: Poster

Donnerstag, 3. April 2014, 17:00–20:00, P1

Structural and electrical investigations of Si-doped (InxGa1−x)2O3 thin films — •Anna Werner, Stefan Müller, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Semiconductor Physics Group, Institut für Experimentelle Physik II, Leipzig, Germany

For the realization of solar-blind photodetectors the semiconductor β-Ga2O3 is due to the large band gap Eg of 4.9 eV especially suitable. Alloying β-Ga2O3 with indium allows to decrease Eg significantly and allows to control Eg and makes wavelength-selective photo detectors feasible. In this contribution we present structural and electrical properties of (InxGa1−x)2O3 thin films grown by pulsed laser deposition on c-plane saphire substrate in dependence of the alloy composition. For our investigations we used a wafer having a continuous composition spread. The In content varies between x = 0.008−0.69. Additionally the wafer is doped with 0.1% silicon to improve the electric conductivity. The lateral composition gradient was realized by ablating a segmented PLD target [1]. The thin film has monoclinic crystal structure and is (-201) oriented. The incorporation of In increases the spacing between (-201) planes. Transmission measurements exhibit a decrease of Eg with increasing In content. We investigated the properties of Schottky contacts fabricated in front-front geometry on a stripe of the wafer containing the complete range of In compositions. For that we used reactively sputtered PdOx Schottky contacts and determined their characteristic parameters in dependence on the In content.

[1] H. von Wenckstern et al., CrystEngComm. 15, 10020 (2013)

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