Parts | Days | Selection | Search | Downloads | Help
DY: Dynamik und Statistische Physik
DY 19: Poster II
DY 19.33: Poster
Thursday, March 20, 1997, 09:30–12:30, Z
Speed Properties of an IR to Visible Image Converting
Semiconductor-Gas-Discharge-System — •I. Reimann1, Yu. A. Astrov1, L. M. Portsel2, B. Kukuk1, and H.-G. Purwins1 — 1Institut f"ur Angewandte Physik, Universit"at M"unster, Correnstr. 2-4, D-48143 M"unster — 2A. F. Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg
A hybrid semiconductor gas discharge device is used for the fast conversion of infrared images into the visible domain. It consists of a photosensitive Si<Zn> or Si<In> semiconductor and a gas discharge layer of Ar, N2 or a mixture of both.
Experimental data shows, that the characteristic speed of this nonlinear device is essentially dependent on the degree of excitation with IR light. Generally it is increasing with the current in the device. Conclusions of a numerical nonlinear model are in general agreement to the exprimental observations.
As application for the system, the fast conversion of pulsed light from a Nd:YAG-Laser (λ = 1.318µ m) to the visible range is demonstrated. It is shown, that spatio-temporal dynamics of laser radiation on the microsecond time scale can be resolved.
(report will be in german language.)