Münster 1997 – scientific programme
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HL: Halbleiterphysik
HL 22: Poster II
HL 22.18: Poster
Tuesday, March 18, 1997, 15:30–18:30, Z
Optimal resonant tunneling in DBRT semiconductor structures — •P.N. Racec1,2, C. Popescu2, and T. Stoica2 — 1Brandenburgische Technische Universität Cottbus
Fakultät 1, Postfach 101344, 03013 Cottbus — 2Institute of Physics and Technology of Materials, Bucharest, PO Box Mg7, 76900 Bucharest, Romania
We will show that physics of optimal resonant tunneling is not in the departures from constant potential within the barriers and well, due to the apllied on electric field, but in the effectiv symmetry of the rectangular barrier profile, which approximate the real potential profile, for the corresponding aplied bias. Given a certain first barrier a convenient rectangular well and second barrier can be added to it which ensures the requirements for the optimal resonant tunneling.