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HL: Halbleiterphysik
HL 3: Theorie I
HL 3.3: Talk
Monday, March 17, 1997, 11:00–11:15, H2
Theoretical and experimental determination of the inelastic mean-free path of excited electrons in Si, CdTe, ZnSe, and MgTe — •A. Fleszar1, W. Hanke1, W. Spahn2, and W. Faschinger2 — 1Institut für Theoretische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg — 2Physikalisches Institut der Universität Würzburg, Lehrstuhl für Experimentelle Physik III, Am Hubland, D-97074 Würzburg
We have calculated within the GW approximation the self energy of
electrons in a broad energy range in bulk Si, CdTe, ZnSe and MgTe.
From the imaginary part of the self energy the inelastic mean-free path
(IMFP) of excited electrons was obtained for energies up to a few
hundreds electronvolts above the Fermi level. The calculated IMFP-
versus electron-energy curves show a characteristic minimum around
50 eV. For selected energies we have experimentally determined
the IMFP in these materials by depositing epitaxially the semiconductor
on various substrates and measuring the intensity of the XPS-core
signals from the substrate as a function of the deposited-semiconductor
thickness.
Work supported by the DFG under the SFB 410.