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HL: Halbleiterphysik

HL 38: Implantation

HL 38.4: Talk

Friday, March 21, 1997, 11:45–12:00, H2

Defect Production in Si Implanted with Oxygen Ions in MeV-range — •V.S. Varichenko^1,2, A.A. Melnikov¹, N.M. Kazyuchits¹, P.I. Gajduk³, A.M. Zaitsev², and W.R. Fahrner² — ¹Belarussian State University, HEII Laboratory, Minsk 220050, Belarus — ²FernUniversity Hagen, LGBE, Haldener Str. 182, 58084 Hagen, Germany — ³Belarussian State University, Department of Radiophysics, Minsk 220050, Belarus

The spatial distribution of radiation defects in (111) oriented silicon subject to a polienergetic implantation of oxygen ions (8, 10.5, 11, 19.7 MeV ; dose of 10¹⁵ cm⁻²) has been investigated. Spreading resistance, optical reflectivity and cross-sectional TEM techniques have been used for this purpose. The depths of location of the damaged regions in the irradiated layer coincide well with the projected ranges of the ions calculated by the TRIM code. In contrast to this behavior the widths of these regions significantly exceed the theoretically predicted values. We explain this effect on the basis of ion track channeling and charge state fluctuations of the fast ions. The transformation of the secondary defects (rodlike defects, dislocation loops, stacking faults) formed by a high temperature annealing has been also studied.