Münster 1997 – scientific programme
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HL: Halbleiterphysik
HL 40: Poster III
HL 40.20: Poster
Friday, March 21, 1997, 11:00–14:00, Z
Direct-gap reduction and valence band splitting of CuPtB-type ordered (AlxGa1−x)InP2 (0<x<1) studied by dark-field spectroscopy — •M. Schubert, B. Rheinl"ander, I. Pietzonka*, T. Sa"s*, and V. Gottschalch* — Fakult"at f"ur Physik und Geowissenschaften, Fakult"at f"ur Chemie und Mineralogie *
Universit"at Leipzig, Linnéstra"se 5,D-04103 Leipzig
The order-dependent valence-band splitting and direct-gap reduction in
spontaneously ordered (AlxGa1−x)InP2 are determined by
dark-field
spectroscopy at room temperature. Regardless to the alloy composition
x both parameters depend on the degree of long range CuPtB-type order.
We obtain the direct gap for disordered and the order induced changes
of the spin-orbit splitting and the crystal-field splitting normalized
to the direct-gap change for perfectly ordered (AlxGa1−x)InP2
alloys as a function of the alloy composition x (0<x<1).