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O: Oberflächenphysik
O 23: Diffusion/Wachstum auf Metallen
O 23.3: Talk
Wednesday, March 19, 1997, 16:30–16:45, S 10
The q dependence of the growth-oscillation period of x-ray reflectivity in heteroepitaxy — •E. Weschke1, C. Schüßler-Langeheine1, R. Meier1, G. Kaindl1, C. Sutter2, D. Abernathy2, and G. Grübel2 — 1Institut für Experimentalphysik, Freie Universität Berlin Arnimallee 14, D-14195 Berlin-Dahlem, Germany — 2European Synchrotron Radiation Facility, BP. 220, 38043 Grenoble Cédex, France
We have studied the epitaxial growth of Ho on W(110) with x-ray scattering. For this system, pronounced oscillations of the specular x-ray reflectivity as a function of deposited material are observed, which allow a detailed analysis of period and waveform. In contrast to homoepitaxial studies, it is found here that the period of these growth oscillations varies proportional to the inverse of the length of the scattering vector q perpendicular to the surface. This behavior will be discussed within a kinematic model, showing that the q dependence is characteristic for heteroepitaxy in general, while for homoepitaxy the period is independent of q. The q dependence has to be taken into account when growth oscillations in x-ray reflectivity are related to the number of deposited layers.