Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

VA: Vakuumphysik und Vakuumtechnik

VA 3: Ausgasung, Passivierung

VA 3.4: Vortrag

Montag, 17. März 1997, 17:00–17:20, ZH

Room temperature growth and characterisation of SiO₂ passivation layers by plasma enhanced evaporation in the UHV — •A. Strass, A. Fischer, W. Hansch, P. Bieringer, A. Neubecker, and I. Eisele — Institut f"ur Physik, ET9, Universit"at der Bundeswehr M"unchen, Werner-Heisenberg-Weg 39, D-85579 Neubiberg

Thin SiO₂ films were deposited on Si(100) substrates by burning an electron arc in argon/oxygen atmosphere and by simultaneous evaporation of silicon (plasma enhanced evaporation) at room temperature in an UHV chamber that was developed and optimised for this process. The stoichiometric and optical properties of the films were investigated by Auger electron spectroscopy (AES), ellipsometry and Rutherford backscattering. Electrical characterisation was performed by I-V and C-V measurements on metal oxide semiconductor (MOS) structures. Breakdown voltages of up to 9 MV/cm make the oxide films very promising for passivation of electronic devices.