Regensburg 1998 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 2: Poster I

HL 2.31: Poster

Montag, 23. März 1998, 10:30–19:00, A

Damage buildup and removal of ion implanted GaN films — •C. Liu, A. Wenzel, B. Mensching, and B. Rauschenbach — Universit"at Augsburg, Institut f"ur Physik, 86135 Augsburg

The technique of ion implantation is extremely attractive for the fabrication of GaN and related III-V compound devices. However, this technique is still far away from application, because of the implantation-induced damage, which deteriorates the electrical and optic properties. Therefore, further study on the damage buildup and removal is required. In this study, 180 keV Ca⁺- and Ar⁺-ions were homogeneously implanted in MBE-grown GaN films. The substrate temperatures varied from liquid nitrogen temperature (-150^∘C) to room temperature. The as-implanted GaN films were characterized by X-ray diffraction, Rutherford backscattering channeling, cross-sectional transmission electron microscopy, Raman, and compared with the unimplanted virgin as well as the implanted samples after rapid thermal annealing and Laser annealing. Lattice expansion has been found in the as-implanted GaN films and its texture was analyzed by pole figure measurement. The lattice expansion rate depends on the doses, substrate temperatures, and ion kinds. The damage distribution was simulated and compared with the experimental results. The development of the initial amorphous zone into a continuously amorphous layer with increasing dose was demonstrated.