Regensburg 1998 – wissenschaftliches Programm

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PV: Plenarvorträge

PV I

PV I: Plenarvortrag

Montag, 23. März 1998, 08:30–09:15, H1

Present status of InGaN-based blue/green lasers and LEDs — •S. Nakamura — R & D Department Nichia Chemical Industries Ltd. 491, Oka, Kaminaka, Anan Tokushima 774, Japan

InGaN multi-quantum-well (MQW) structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10,000 hours under continuous-wave operation at room temperature. Under operation at a high temperature of 50 C, the lifetime was longer than 1000 hours. Activation energy of the lifetime was estimated to be 0.5 eV. With the operating current increasing above the threshold, a self-pulsation with a high frequency of 3.5 GHz was observed. The luminous efficiencies of current blue and green InGaN quantum-well-structure LEDs are 5 lm/W and 30 lm/W, respectively.