Heidelberg 1999 – scientific programme
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Q: Quantenoptik
Q 41: Festkörperlaser IV
Q 41.5: Talk
Friday, March 19, 1999, 15:15–15:30, PH2
Diode pumped self-Q-switched microchip laser — •Q. Zhu1, Baining Liu1, Hans-Joachim Eichler1, Volker Gäbler1, J. Chen2, S. Zhang3, and X. Wu3 — 1Optisches Institut, Technische Universit"at Berlin, Str. des 17. Juni 135, D-10623 Berlin, Germany — 2Optical Engineering Dept., Zhejiang University, Hangzhou, 310027, P.R. China — 3North China Research Institute of Electro- Optics, 100015 Beijing, P.R. China
Co-doped Cr,Nd:YAG crystals were used to realize a passive self Q-switched Nd:YAG microchip laser at 1064 nm. When the system was cw diode pumped, the pulse width could be chosen from 8ns to 60ns by different resonator length, while the pulse repetition rate varies from 2kHz to 30kHz with different pump power. However, in case of cw pumping the pulse intensity and the pulse seperation are unstable. Operating the pump diode in quasi-cw mode, stable and high peak power pulses with TEM00 structure can be generated. In this case, the stable output with an adjustable repetition rate from 1 Hz to 1 kHz is realized by adjustment of the baseline of pump power.