Münster 1999 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 2: Ionenimplantation II

DS 2.2: Fachvortrag

Montag, 22. März 1999, 11:15–11:30, PC 7

Tin implanted in rutile single crystals: lattice location and the influence of the analyzing He-beam — •R. Fromknecht¹, O. Meyer¹, and I. Khubeis² — ¹Forschungszentrum Karlsruhe, INFP, Postfach 3640, D-76021 Karlsruhe — ²Fac. of Appl. Science, Al-Balqa Univ., Jordan

Sn ions of 260 keV were implanted into <001> and <100> oriented TiO₂ single crystals (rutile) at room temperature. The lattice disorder and the lattice site location was determined by Rutherford Backscattering and Channeling (RBS-C). Successive increase of the implanted Sn dose from 5·10¹⁴ Sn⁺/cm² to 5·10¹⁵ Sn⁺/cm², followed by angular scan measurements at each dose leads to a strong increase of the dechanneling component over the whole depth range. This effect was studied in detail and could be attributed to the analyzing He beam. Prolonged irradiation with the He beam causes strain in the samples and blistering of the irradiated spot at large He doses. RBS-C measurements on single dose Sn-implants revealed deeper and wider Sn dip curves than those of Ti. This indicates that as-implanted Sn-forms coherent, nanocrystalline precipitates. Annealing up to 1000 K revealed similar results. Annealing above 1100 K and hot implants (1100 K) caused Sn-diffusion with Sn on substitutional Ti-lattice sites.