Münster 1999 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 33: Postersitzung

DS 33.40: Poster

Dienstag, 23. März 1999, 09:30–17:30, Aula

Epitaxial BaBi₄Ti₄O₁₅ - LaNiO₃ thin film heterostructures — •A. Pignolet, K.M. Satyalakshmi, M. Alexe, St. Senz, D. Hesse, and U. Gösele — Max-Planck-Institut für Mikrostrukturphysik Halle

Bismuth-based layer-structured oxide ferroelectric thin films are gaining much attention for applications due to their high resistance against polarization switching fatigue. The fatigue endurance can be further improved by growing epitaxial thin films of these layered oxides on epitaxial perovskite-type conducting oxide electrodes such as LaNiO₃ (LNO). The ferroelectric properties of epitaxial thin films of BaBi₄Ti₄O₁₅ (BBiT), a n = 4 member of the Aurivillius family of ferroelectric oxides, have been investigated. The BBiT films have been grown on epitaxial LNO films on single crystalline SrTi O₃ (001) substrates by pulsed laser deposition (PLD). The effect of the deposition parameters such as the substrate temperature on the structure, morphology and ferroelectric properties of the BBiT films are discussed. Epitaxial c-oriented BBiT films, as well as epitaxial BBiT films with mixed c- and a-orientations have been obtained, exhibiting different surface morphologies and ferroelectric behaviour. The c-oriented BBiT films display no ferroelectric hysteresis and have a very smooth surface while the BBiT films with mixed c- and a-orientations exhibit a rough surface and good ferroelectric properties.