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HL: Halbleiterphysik

HL 12: Poster I

HL 12.33: Poster

Monday, March 22, 1999, 14:00–18:00, Z

Cross-polarized reflectance difference spectroscopy on CuPt ordered Al_xGa_1−xInP — •Tino Hofmann¹, Mathias Schubert¹, Bernd Rheinländer¹, Ines Pietzonka², and Volker Gottschalch² — ¹Fakultät für Physik und Geowissenschaften, Halbleiterphysik, Universität Leipzig, Linnestraße 5, D-04103 Leipzig — ²Fakultät für Chemie und Mineralogie, Halbleiterchemie, Universität Leipzig, Linnestraße 3, D-04103 Leipzig

We use a cross-polarized modulated reflectance difference technique (cRDS)

at oblique angle of incidence as novel approach for non-destructive

determination of birefringence and zone-center transition energies in

spontaneously ordered AlGaInP thin films. This internal modulation

technique allows characterization of extremely weak anisotropy in thin-

film heterostrutures. The cRDS data are directly proportional to the

sample birefringence, and do not rely on the normal incidence setup

necessary for standard RDS. The effect of this differential technique

is to quench the strong on-diagonal reflectivity, and to accomplish the

sample itself as polarization modulator. A detailed description of this

technique will be given. We also report the anisotropic Seraphin

coefficients for CuPt-ordered compounds.