Münster 1999 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 17: Quantenpunkte und Quantendr
ähte II
HL 17.3: Vortrag
Dienstag, 23. März 1999, 11:00–11:15, H4
Photoluminescence of InAs quantum dots grown by SMEE on GaAs misorientated surfaces — •R.B. Iouferev1,2, B.V. Novikov2, S.Yu. Verbin2, A. Golombek1, R. Goldhahn1, G. Gobsch1, G.E. Cirlin3, V.G. Dubrovskii3, and V.N. Petrov3 — 1Technische Universität Ilmenau, Institut für Physik — 2Institute of Physics, St.Petersburg University, 198904 Peterhof, Russia — 3Institute for Analytical Instrumentation of RAS, 198103 St.Petersburg, Russia
In this paper we present photoluminescence (PL)
results of self-organised InAs/GaAs quantum dot (QD) arrays
grown on vicinal GaAs (100) substrate by means of submonolayer
migration enhanced epitaxy (SMEE) technique. The mean InAs
thickness of samples varies between 1.8 and 3 monolayers.
The energy of the QD PL maxima as function of misorientation angle between (100) surface and [001] direction (0...7 degrees) shifts gradually from 1.25 to 1.37eV. Simultaneously, the full width at half maximum (FWHW) of the emission band decreases from 95 to 33meV. By increasing temperature from 4.2 to 80K a reduction of the emission band intensity is indicated. Furthermore, at T>80K two bands with longer wavelength are clearly resolved.
The results are discussed within a model taking into account emission from both lowest and excited QD levels.