Münster 1999 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 33: Bauelemente
HL 33.8: Vortrag
Donnerstag, 25. März 1999, 17:45–18:00, H1
Active Defect-Engineering by a Controlled Thermal Donor Formation in Cz Silicon — •Reinhart Job1, Alexander Ulyashin2, and Wolfgang R. Fahrner1 — 1FernUniversit"at Hagen, Lehrgebiet Bauelemente der Elektrotechnik, Haldener Str. 182, 58084 Hagen — 2State Polytechnical Academy, Minsk, Belarus
The general aim of this study is the development of an ’active defect engineering’ in semiconductors taking advantage of special defects like thermal donors (TD). Electronic devices (diodes) which were built on Czochralski (Cz) silicon by a method based on TD donor formation is presented. Hydrogen incorporation from a plasma into p-type Cz Si results in an enhanced TD formation under controllable conditions. Two process routes are described [1]: (i) a one-step-process where the p-n junction appears just after the plasma hydrogenation at 400-450 C, (ii) a two-step-process where the p-n junction formation requires a post-hydrogenation annealing. The two-step-process shows that the essential process for the TD generation is the creation of metastable molecular hydrogen species at about 250 C and their decay at 400-450 C [2]. During post-hydrogenation annealing around 400-450 C neutral atomic hydrogen is created by the decay of such complexes. Atomic hydrogen significantly lowers the activation energy for the diffusion of interstitial oxygen and therefore an enhanced TD formation is supported. The presented process routes can be applied for a new rapid low temperature technology for the development of electronic devices with deep p-n junctions (with a depth up to 0.1 mm or more). It is to underline that no dopant incorporation is involved in the processes. [1] R. Job et al., MRS Symp. Proc. Series, vol. 469, p. 101 (1997), [2] R. Job et al., MRS Symp. Proc. Series, vol. 513, p. 347 (1998)