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Münster 1999 – scientific programme

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HL: Halbleiterphysik

HL 45: Störstellen

HL 45.2: Talk

Friday, March 26, 1999, 09:45–10:00, H4

Diffusion and passivating effect of ion-implanted hydrogen in p-type silicon carbide — •Norbert Achtziger1, Christian Hülsen1, Wolfgang Witthuhn1, M.K. Linnarsson2, M. Janson2, and B.G. Svensson21Institut für Festkörperphysik, Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany — 2Royal Institute of Technology, Solid State Electronics, Electrum 229, S-16440 Kista-Stockholm

The diffusion and passivating effect of hydrogen in SiC are

studied in epitaxial layers of p-type SiC. Loading with

hydrogen (1H or 2H) is done by low-energy ion implantation

(energy in the order of 300 eV per atom) to minimize the

creation of implantation defects which are known to trap

hydrogen effectively. The electrically active dopants B and Al

are characterized by CV profiling and admittance spectroscopy on

Schottky diodes; deep levels are monitored by DLTS. For several

2H-passivated samples, the chemical hydrogen profile is measured

by SIMS; it correlates well with the depth profile of passivated

acceptors derived from the CV-measurements [1]. Hydrogen

diffusion on a micrometer scale occurs already at room

temperature. Depending on implantation temperature (300...680 K)

and acceptor concentration, either a nearly homogenous partial

passivation or a step-like profile of completely passivated

acceptors is detected. In the latter case, a reduction of the

net acceptor concentration by up to 3 orders of magnitude occurs.

There is also a passivation of the deep level known as D-center

with a thermal stability exceeding 600 K.

[1] N.Achtziger, J.Grillenberger, W.Witthuhn, M.K.Linnarsson,

M.Janson, and B.G.Svensson, Appl. Phys. Lett. 73(7), 945 (1998)

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