Münster 1999 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 5: Grenz- und Oberfl
ächen I

HL 5.3: Vortrag

Montag, 22. März 1999, 11:00–11:15, H4

Electronic structure of lanthanide silicides grown on Si(111) and Si(001) — •S. Vandré, C. Preinesberger, T. Kalka, and M. Dähne-Prietsch — Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin, Germany

Epitaxial lanthanide (Ln) silicides on Si(111) are of considerable interest both for scientific research and device applications because of their structural perfection and their extremely low Schottky-barrier heights [1,2]. In our high-resolution core-level photoemission study on Gd, Dy, Er, and Lu silicides on Si(111), different lattice sites of the silicide layers can be assigned to the observed spectral components. In addition, a flat-band situation is observed for the first time for silicide monolayers on n-Si(111). In contrast to these two-dimensional layers on Si(111), a variety of low-dimensional structures is observed for Dy on Si(001) [3]. They result in several spectral components, related to variations in charge transfer at the respective lattice sites.

[1] T.P. Roge, F. Palmino, C. Savall, J.C. Labrune, C. Pirri, Surf. Sci. 383, 350 (1997)

[2] S. Vandré, T. Kalka, C. Preinesberger, I. Manke, H. Eisele, M. Dähne-Prietsch, R. Meier, E. Weschke, G. Kaindl, Appl. Surf. Sci. 123/124, 100 (1998)

[3] C. Preinesberger, S. Vandré, T. Kalka, M. Dähne-Prietsch, J. Phys. D: Appl. Phys. 31, L43 (1998)