Münster 1999 – wissenschaftliches Programm
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O: Oberflächenphysik
O 4: Struktur und Dynamik reiner Oberfl
ächen (I)
O 4.6: Vortrag
Montag, 22. März 1999, 12:30–12:45, S1
Spontaneous formation of an ordered c(4x2)/(2x1) domain pattern on Ge(001) — •H.J.W. Zandvliet1, B.S. Swartzentruber2, W. Wulfhekel1, and B. Poelsema1 — 1Department of Applied Physics and Centre of Materials Research, University of Twente, PO Box 217, Enschede, The Netherlands — 2Sandia National Laboratories, Albuquerque, New Mexico 87185-1413, USA
The reconstruction with the lowest surface free energy per unit area at room temperature of the semiconductor group IV (001) surfaces is generally believed to be (2x1). However, room temperature scanning tunneling microscopy measurements of extremely clean Ge(001) reveal the presence of an ordered domain pattern consisting of c(4x2) and (2x1) domains arranged in stripes with a width of several dimer row spacings, oriented along the dimer rows. We show that although (2x1) and c(4x2) have comparable surface free energies per unit area, an striped domain phase consisting of (2x1) and c(4x2) domains has a lower surface free energy per unit area.