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Q: Quantenoptik
Q 12: Festkörperlaser II
Q 12.6: Talk
Tuesday, April 4, 2000, 17:45–18:00, HS XI
Compact diode-pumped solid-state lasers using microstructured silicon carriers — •Ralf Koch1, Asa Claesson1, Johan Holm1, and Fredrik Laurell2 — 1Acreo AB, Electrum 236, SE-164 40 Kista, Sweden — 2Dept of Physics/Optics, Royal Institute of Technology, SE-100 44 Stockholm, Sweden
We present a new versatile design for compact diode-pumped solid-state lasers, based on a microstructured silicon carrier with etched V-grooves. It provides efficient thermal management as well as compact integration and alignment of all active and passive components needed for miniaturized diode-pumped solid-state lasers. By employing wet etching, the V-grooves have a bottom angle of 70.5 ∘. Optical fibers and cylindrical lens elements are center aligned when placed in the grooves. Laser crystals are diced with rhombic cross sections from mirror coated wafers, and placed in the silicon grooves, thus aligned with the other optical elements. An evaporated indium film is used to fix the crystal using thermo-compression. A second silicon carrier is placed as a lid to provide robustness and homogeneous heat sinking.
Initial experiments showing the concept’s feasibility have been performed. Rhombic laser crystals with lateral dimensions of about 1 mm were sawn from a 3 mm thick Nd:YAG wafer with standard doping concentration (1 at% Nd). Continuous wave output power in excess of 3 W has been achieved, with nearly transversal fundamental mode behaviour, for a device pumped by a fiber-coupled diode.