Regensburg 2000 – wissenschaftliches Programm

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DF: Dielektrische Festkörper

DF 5: Keramiken

DF 5.5: Vortrag

Dienstag, 28. März 2000, 16:30–16:50, H11

Epitaxial growth of SrBi₂Ta₂O₉ ferroelectric thin films on Silicon — •Juan Carlos Martinez¹, Jens Schumacher¹, Roberto Ratieri², Dana Miu³, Markus Maier¹, Hans-Jürgen Butt², and Hermann Adrian¹ — ¹Institut für Physik; Johannes Gutenberg - Universität Mainz; 55099 Mainz; Germany — ²Institut für Physikalische Chemie; Johannes Gutenberg - Universität Mainz; 55099 Mainz; Germany — ³National Institute for Laser, Plasma and Radiation Physics - Laser Dept.; P.O. Box MG-36; 76900 Bucharest; Romania

We investigate the influence of the use of different buffer layers in the growth of SrBi₂Ta₂O₉ on silicon substrates (SBT). By using a double YSZ/CeO−2 buffer it was possible to grow cube to cube c-axis oriented SBT on Si. In spite that in this material the c-axis is not an easy axis for the polarisation, capacitance vs. bias voltage measurements reveal a histeretical behaviour were the remanent capacitance could be switched by a factor four. From AFM measurements in piezoelectric response mode we could observe and write ferroelectric domains in nanometer scale on the surface of our films.