Regensburg 2000 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 12: Poster I: Quanten Hall Effekt (1-9), II-VI Halbleiter (10-17), Epitaxie (18-23), Quantenpunkte und -dr
ähte (24-50), Photonik (51-59), Metall-Isolator Übergang (60-64), Si/Ge (65-67), Elektronentheorie (68-69), Amorphe Halbleiter, Ionen-Implantation
HL 12.67: Poster
Montag, 27. März 2000, 14:00–19:00, A
Raman Scattering of Ge Dot Superlattices — •Alexander Milekhin1,2, N.P. Stepina2, A.I. Yakimov2, A.I. Nikiforov2, M. Friedrich1, and D.R.T. Zahn1 — 1Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany — 2Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
A self-organised Ge dot superlattices grown by molecular beam epitaxy of Ge and Si layers using the Stranski-Krastanov growth mode were investigated by Raman spectroscopy. An average size of Ge quantum dots with a typical base dimension of 150Å and a height of 15Å was obtained from the analysis of transmission electron microscopy and scanning tunnel microscopy measurements. Analysis of the frequency position of optical phonons observed in the Raman spectra allows the deformations in Ge quantum dots due to mismatch of lattice parameters in Si and Ge to be determined. Raman scattering by the folded longitudinal acoustic phonons in the Ge dot superlattices was observed and explained using elastic continuum theory.