Regensburg 2000 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 12: Poster I: Quanten Hall Effekt (1-9), II-VI Halbleiter (10-17), Epitaxie (18-23), Quantenpunkte und -dr
ähte (24-50), Photonik (51-59), Metall-Isolator Übergang (60-64), Si/Ge (65-67), Elektronentheorie (68-69), Amorphe Halbleiter, Ionen-Implantation
HL 12.70: Poster
Montag, 27. März 2000, 14:00–19:00, A
Enhanced conductivity of starburst amine by controlled p-doping and implications for its use in organic light-emitting diodes as hole transport material — •X. Zhou, A. Nollau, J. Blochwitz, M. Pfeiffer, T. Fritz, and K. Leo — Institut für angewandte Photophysik, Technische Universität Dresden, D-01062 Dresden, Germany
Thin films of starburst amine, 4,4’,4’-Tris(N,N-diphenyl-amino) triphenylamine (TDATA), doped by a fully fluorinated form of tetracyano-quinodimethane (F4–TCNQ), are characterized in situ by temperature dependent conductivity and Seebeck measurements. The conductivity increases with dopant concentration and is many orders of magnitude higher than that of undoped material. Before doping, the conductivity of the thin films is not measurable (less than 10−9 S/cm) both in vacuum and in air. The room temperature condutivity of the samples increases from 4× 10−7 S/cm to 6× 10−6 S/cm with the molar doping ratio increasing from 0.38% from 2.55%. We expect that the use of p-doped TDATA thin films as hole transport layer, together with optimized devices structure, will improve the performance of organic light-emitting diodes. Further work is in progress.