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HL: Halbleiterphysik
HL 27: Poster II: SiC (1-7), Ultrakurzzeitdynamik (8-15), Halbleiterlaser (16-20), GaN (21-38), III-V Halbleiter (39-56), Photovoltaik (57-64), Störstellen (65-68), Tern
äre Halbleiter (69-70)
HL 27.35: Poster
Wednesday, March 29, 2000, 14:00–19:00, A
Hydride Vapour Phase Epitaxy of thick GaN layers with a home-built vertical reactor — •W. Zhang, S. Rösel, D. M. Hofmann, and B. K. Meyer — I. Physikalisches Institut der Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen
The growth of thick high quality GaN layers is a challenge as they can be used as quasi-substrates and may help to overcome the problems arising from the lack of lattice matched substrates. For this purpose we developed a new HVPE equipment in which a two-zone furnace is applied to heat the metal Ga source and substrate, respectively. The films were deposited on c-Al2O3 (0001). The growth parameters, such as pressure, temperature, and flow rates were varied systematically to determine the influence on the growth rate and crystal quality of GaN epitaxial layers. The influence of a pre-treatment of the substrate (nitridation) is explored. The quality of the HVPE grown epitaxial films is characterised by optical Microscopy, X-ray diffraction, photo-luminescence and Hall effect measurements. A comparison to GaN prepared by other growth methods will be presented.