Parts | Days | Selection | Search | Downloads | Help
HL: Halbleiterphysik
HL 27: Poster II: SiC (1-7), Ultrakurzzeitdynamik (8-15), Halbleiterlaser (16-20), GaN (21-38), III-V Halbleiter (39-56), Photovoltaik (57-64), Störstellen (65-68), Tern
äre Halbleiter (69-70)
HL 27.59: Poster
Wednesday, March 29, 2000, 14:00–19:00, A
Grain boundary oriented finger (GBOF) metalisation on multicrystalline silicon solar cells — •M. Radike and J. Summhammer — Atomic Institute of the Austrian Universities, Vienna, Austria
Multicrystalline silicon solar cells gain interest and market volume compared to monocrystalline material. The main reasons are
that
monocrystalline silicon solar cells are more expensive and require a
higher thermal budget in production. Themain difference to
monocrystalline silicon cells are the grain
boundaries. They decrease the conversion efficiency due to enhanced
recombination at impurities and traps there, and due to their
columnarity they also offer low resistance paths between n-doped and
p-doped
regions. Earlier studies show that it is beneficial to put the metal
fingers on the front side of mc-Si solar cells such that they follow
grain boundaries instead
of the customary parallel lines. Theoretical as well as
experimental studies show an increase of the fill factor as
well as of the efficiency.
In order to transfer these results to the industrial process, it must be
fully automated. In particular, the decisions, as to which grain
boundaries
to cover with metal lines, must be automated, because they are specific
for each individual wafer.
We present results of 100x100mm2 mc-Si cells processed in this
manner and compare their performance to that of identically processed
cells which received a traditional finger grid of parallel lines.