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Regensburg 2000 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 27: Poster II: SiC (1-7), Ultrakurzzeitdynamik (8-15), Halbleiterlaser (16-20), GaN (21-38), III-V Halbleiter (39-56), Photovoltaik (57-64), Störstellen (65-68), Tern
äre Halbleiter (69-70)

HL 27.59: Poster

Mittwoch, 29. März 2000, 14:00–19:00, A

Grain boundary oriented finger (GBOF) metalisation on multicrystalline silicon solar cells — •M. Radike and J. Summhammer — Atomic Institute of the Austrian Universities, Vienna, Austria

Multicrystalline silicon solar cells gain interest and market volume compared to monocrystalline material. The main reasons are

that monocrystalline silicon solar cells are more expensive and require a higher thermal budget in production. Themain difference to monocrystalline silicon cells are the grain boundaries. They decrease the conversion efficiency due to enhanced recombination at impurities and traps there, and due to their columnarity they also offer low resistance paths between n-doped and p-doped regions. Earlier studies show that it is beneficial to put the metal fingers on the front side of mc-Si solar cells such that they follow grain boundaries instead of the customary parallel lines. Theoretical as well as experimental studies show an increase of the fill factor as well as of the efficiency.
In order to transfer these results to the industrial process, it must be

fully automated. In particular, the decisions, as to which grain boundaries to cover with metal lines, must be automated, because they are specific for each individual wafer.
We present results of 100x100mm2 mc-Si cells processed in this manner and compare their performance to that of identically processed cells which received a traditional finger grid of parallel lines.

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