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HL: Halbleiterphysik
HL 37: GaN II
HL 37.7: Talk
Thursday, March 30, 2000, 17:30–17:45, H15
Studies of the epitaxial direction relationship in 2H-AlN/Si(001) heterosystem — •Vadim Lebedev1, Ute Kaiser1, Joerg Jinschek1, Bernd Schroeter1, Wolfgang Richter1, and Juergen Kraeusslich2 — 1Universitaet Jena, Institut fuer Festkoerperphysik, 07743 Jena, Max-Wien-Platz 1 — 2Universitaet Jena, Institut fuer Optik und Quantenelektronik, 07743 Jena, Max-Wien-Platz 1
The epitaxial growth of crystalline wurtzite AlN thin films on
(001) Si substrates by plasma-assisted molecular beam epitaxy
(PAMBE) is reported. The nucleation and the growth dynamics have
been studied in-situ by reflection high energy electron
diffraction (RHEED). Cross-sectional transmission electron
microscopy (XTEM) investigation revealed a two-domain film
structure with a 30deg rotation between neighboring domain
orientations (AlN1and AlN2) and an epitaxial orientation
relationship of
[0002]AlN || [002]Si and <01-10>AlN1 || <-2110>AlN2|| [220]Si
resulting in a 12-fold crystallographic symmetry as the 2H-AlN
domains are rotated by 30deg with respect to each other. These
findings were also confirmed by X-ray diffraction and X-ray
photoelectron diffraction analysis. A model for the nucleation
and growth mechanism of 2H-AlN layers on Si(001) is proposed.
We assume that the single atomic step boundary structure of the
nominal Si(001) surface determines the two-domain character of
the films with nearly equivalent proportion of each domain type.