Regensburg 2000 – scientific programme
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HL: Halbleiterphysik
HL 38: Poster III: Transporteigenschaften (1-14), Optische Eigenschaften (15-31), Grenz-/Oberfl
ächen (32-44), Heterostrukturen (45-57), Bauelemente (58-67), Gitterdynamik (68-69), Diamant (70), Raster-Tunnel-Mikroskopie (71)
HL 38.29: Poster
Thursday, March 30, 2000, 14:00–19:00, B
Extrinsic photoluminescence in p-type Indium Selenide as function of pressure — •Francisco Javier Manjón1,2, Clemens Ulrich1, Alfredo Segura2, and Vicente Muñoz2 — 1Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart — 2Departament de Física Aplicada i Institut de Ciència dels Materials de la Universitat de València, C. Dr. Moliner, 50, 46100 Burjassot (Valencia) Spain
Hole effective masses in layered semiconductor InSe have been recently obtained from low-temperature photoluminescence in p-type InSe doped with N. We present a pressure dependence study up to 5.6 GPa of the InSe:N photoluminescence in order to estimate the pressure dependence of hole effective masses from the change in the ionization energy of the N shallow acceptor level. The acceptor level shifts like the Z direct gap at low pressures and show an increase of the ionization energy above 1 GPa. The use of a k·p model for III-VI layered semiconductors have allowed us to obtain the pressure dependence of the hole effective masses in InSe in order to compare it with that obtained experimentally. Calculations show that a shallow acceptor in InSe should have a lower ionization energy than that observed for N at room pressure. This means that N does not behave entirely like a shallow level in InSe, and consequently, the room pressure values of hole effective masses previously reported are slightly overestimated.