Regensburg 2000 – scientific programme
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HL: Halbleiterphysik
HL 38: Poster III: Transporteigenschaften (1-14), Optische Eigenschaften (15-31), Grenz-/Oberfl
ächen (32-44), Heterostrukturen (45-57), Bauelemente (58-67), Gitterdynamik (68-69), Diamant (70), Raster-Tunnel-Mikroskopie (71)
HL 38.9: Poster
Thursday, March 30, 2000, 14:00–19:00, B
Impact Ionization and Intracollisional Field Effect — •Niels Fitzer1, Ronald Redmer1, Justino R. Madureira1, and Wolgang Schattke2 — 1Univ. Rostock, FB Physik, D-18051 Rostock — 2Univ. Kiel, Inst. f. Theor. und Astrophysik, Leibnizstr. 15, D-24118 Kiel
Impact ionization plays a crucial role for electron transport in
semiconductors at high electric fields. We derive appropriate
quantum kinetic equations for electron transport in semiconductors
within linear response theory. The field-dependent collision
integral is evaluated for the process of impact ionization. A
known, essentially analytical result is reproduced within the
parabolic band approximation [W. Quade et al.,
Phys. Rev. B 50, 7398 (1994)]. Based on the numerical
results for zero field strengths but realistic band structures, a
fit formula is proposed for the respective field-dependent
impact ionization rate. Explicit results are given for GaAs, Si,
GaN, ZnS, and SrS [ R. Redmer et al., J. Appl. Phys. (January 2000)].