Regensburg 2000 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 4: Heterostrukturen
HL 4.11: Vortrag
Montag, 27. März 2000, 13:00–13:15, H14
Grazing Incidence Diffraction Strain Analysis of a laterally modulated QW System produced by Focused Ion Implantation — •U. Pietsch1, A. Daniel2, J.P. Reithmaier3, and A. Forchel3 — 1University of Potsdam, Institute of Physics, Am Neuen Palais 10, 14469 Potsdam, Germany — 2University of Linz, Institute of Semiconductor Physics, Altenbergerstr. 69, 4040 Linz, Austria — 3University of Würzburg, Technische Physik, Am Hubland, 97074 Würzburg, Germany
We investigated depth resolved the strain distribution of a lateral surface grating consisting of a GaAs-InGaAs Quantum well produced by a 1013 cm−2 Ga+ focused ion beam (diameter 30nm). Using this method we were able to reconstruct the strain distribution and to define the penetration depth of the implanted ions. For a particular sample we found an almost depth independend strain distribution as well as a slight periodical change of the lateral composition.