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O: Oberflächenphysik
O 11: Postersession (Eröffnung)
O 11.133: Poster
Monday, March 27, 2000, 19:00–22:00, Bereich C
Novel Features of the Si(100) 4x4 Reconstruction Induced by the Interaction with Bi — •Andriy Goryachko1, Pavel Melnik2, Nikolaj Nakhodkin2, Tatyana Afanasjeva2, and Igor Koval2 — 1Institut fuer Halbleiterphysik, Walter-Korsing-Str. 2, D -15230 Frankfurt (Oder), Germany — 2Kiev Taras Shevchenko University, Department of Radiophysics, Volodymyrska 64, 252033, Kiev, Ukraine
We observed STM images of the Si(100)-4x4 surface, which were not reported in the literature. On the basis of these results we suggest a new model for the atomic structure of this surface and the mechanism of its formation.
The 4x4 reconstruction was obtained from the well-known 2x1 reconstruction by depositing and evaporating various amounts of Bi on the Si(100) surface. We employed semiempirical cluster calculations to develop a new structural model of the 4x4 phase, which differs from other existing models through the absence of the centrosymmetry in the surface unit cell. We also provide a detailed analysis to describe the transition between 2x1 and 4x4 phases. Potential applications of the Si(100)-4x4 surface for thin film growth are discussed.