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SYGU: Grenzflächen zwischen unterschiedlichen Materialien
SYGU 2: Hauptvorträge
SYGU 2.5: Vortrag
Donnerstag, 30. März 2000, 17:15–17:30, H4
Densification of solution-grown ZrO2 thin films on organic templates — •K. Ritley, K. P. Just, F. Schreiber, H. Dosch, T. P. Niesen, and F. Aldinger — Max-Planck-Institut fuer Metallforschung und ITAP, Uni-Stuttgart, Heisenbergstrasse 1, D-70569 Stuttgart
Thin films of ZrO2 were deposited from aqueous solution on Si(100) substrates precovered by functionalized alkyltrichlorosilane self-assembled monolayers (SAMs). The interface structure, thermal stability and densification of these films in the temperature range from room temperature to 750 ∘C in vacuum were measured using in situ x-ray reflectivity. The growth rate is a nonlinear function of time in solution, with a pronounced nonuniformity during the first 30 minutes. The as-deposited films exhibit about 3 nm roughness and a density below that of bulk ZrO2. In situ measurements in vacuum reveal decreasing film thickness, increasing film density and decreasing roughness upon annealing up to 750 ∘C. The densification saturates at the highest measured temperatures, presumably following evaporation of residual contaminants from the aqueous synthesis procedure. Above 300 C∘ the SAM layer is found to structurally decompose. The ZrO2 film structure obtained at the highest
annealing temperatures persists upon cooling to room temperature, and there is no visible evidence of stress-induced microstructural changes, such as peeling or cracking.