Regensburg 2000 – wissenschaftliches Programm
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TT: Tiefe Temperaturen
TT 22: Postersitzung III: Supraleitende Anwendungen (1-4) Massive HTSL, Bandleiter, Filme (5-26), Transport in HTSL (27-30), Elektronenstruktur in Supraleitern (31-43), Borkarbide (44-50), Quantenphasen- und Metall-Isolator-Überg
änge (51-69)
TT 22.3: Poster
Donnerstag, 30. März 2000, 14:00–17:30, A
Heteroepitaxial growth of oxide buffer layers by pulsed laser deposition on biaxially oriented Ni and Ni-alloys tapes — •L. Fernández G.-R., B. Holzapfel, N. Reger, B. de Boer, J. Eickemeyer und L. Schultz — IFW Dresden, Institute for Metallic Materials, PF 270016, 01171 Dresden
The use of Rolling Assisted Biaxially Textured Substrates (RABiTS) is a very promising route for producing Y123 coated conductors. The heteroepitaxial growth of the oxide buffer layers is a critical point in this approach and there are serious problems connected to the formation of NiO on the metal surface prior to the buffer layer deposition, to diffusion of Ni at the elevated depositions temperatures, and to cracking of the buffer layers. Here we report on pulsed laser deposition (PLD) of CeO2, YSZ and Y2O3 buffer layers on recrystallised Ni and nonmagnetic NiCr tapes with an in-plane orientation width (FWHM) of less than 10∘. The heteroepitaxial growth of the oxide films and their microstructure was investigated using standard ex-situ techniques (x-ray diffraction, SEM, AFM).